NSN 5961-01-115-6663

Part Details | TRANSISTOR

5961-01-115-6663 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 62490, 5870621, 587062-1, 5870621, 587062-1, 5870621, 587062-1, 62490, 5961-01-115-6663, 01-115-6663, 5961011156663, 011156663

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 11, 198101-115-666320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-115-6663
Part Number Cage Code Manufacturer
6249034371INTERSIL CORPORATIONDIV NA
587062-154X10RAYTHEON COMPANYDBA RAYTHEON
587062-149956RAYTHEON COMPANYDBA RAYTHEON
587062-13B150RAYTHEON COMPANYDBA RAYTHEON
6249021921RCA CORPDISTRIBUTOR AND SPECIAL PRODUCTS DIV
Technical Data | NSN 5961-01-115-6663
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 200.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC1.00 AMPERES MAXIMUM AND AB500.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB1.0 WATTS MAXIMUM
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-5
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.260 INCHES MAXIMUM
OVERALL DIAMETER0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
END ITEM IDENTIFICATION4920010461613