NSN 5961-01-117-5660

Part Details | TRANSISTOR

5961-01-117-5660 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 9113762, 911376-2, 80618, MSC80618, 5961-01-117-5660, 01-117-5660, 5961011175660, 011175660

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 16, 198101-117-566020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-117-5660
Part Number Cage Code Manufacturer
911376-280249BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC.
8061832421MICROWAVE SEMICONDUCTOR CORP
MSC8061857962STMICROELECTRONICS INC
Technical Data | NSN 5961-01-117-5660
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
POWER RATING PER CHARACTERISTICAG75.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY1 FLANGE AND 2 PIN
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.285 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN
TEST DATA DOCUMENT80249-911376 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
END ITEM IDENTIFICATIONAN/APX-76B 80249 FSCM