Part Details | PHOTO SEMICONDUCTOR DEVICE
5961-01-117-8261 A Semiconductor Device (1) which is responsive to visible or infrared radiant energy. May or may not include mounting hardware and/or heat sink. Excludes SEMICONDUCTOR DEVICE (1), DIODE; SEMICONDUCTOR DEVICE (1), THYRISTOR AND TRANSISTOR. For solid state devices which emit visible or infrared radiant energy, see LIGHT EMITTING DIODE.
Alternate Parts: L14G1, L14G1, 352250043783, 5961-01-117-8261, 01-117-8261, 5961011178261, 011178261
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 23, 1981 | 01-117-8261 | 20587 ( SEMICONDUCTOR DEVICE, PHOTO ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-117-8261
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| L14G1 | 07933 | FAIRCHILD SEMICONDUCTOR CORPSEMICONDUCTOR DIV HQ |
| L14G1 | 09214 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 352250043783 | H0203 | THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS |
Technical Data | NSN 5961-01-117-8261
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| POWER RATING PER CHARACTERISTIC | AF600.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.225 INCHES MINIMUM AND 0.255 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | WITH LENS CAP; INTERNAL JUNCTION CONFIGURATION: NPN |