NSN 5961-01-124-1893

Part Details | TRANSISTOR

5961-01-124-1893 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N6439, 2N6439, 81571001, 8157100-1, 81571001, 8157100-1, 44097HUMIL 70, 44097-H/UMIL 70, SD1468H11, SD1468-H11, 2N6439, 5961-01-124-1893, 01-124-1893, 5961011241893, 011241893

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 28, 198101-124-189320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-124-1893
Part Number Cage Code Manufacturer
2N64394U751ADVANCED SEMICONDUCTOR,INC.DBA A S I
2N643904713FREESCALE SEMICONDUCTOR, INC.
8157100-111447L3 TECHNOLOGIES, INC.DBA COMMUNICATION SYSTEMS - EAST
8157100-149671LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN
44097-H/UMIL 700PJR2MICROSEMI CORP.-RF POWER PRODUCTS
SD1468-H1157962STMICROELECTRONICS INC
2N643950155VARIAN ASSOCIATES INCCOMMUNICATIONS TRANSISTOR DIV
Technical Data | NSN 5961-01-124-1893
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 33.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
CURRENT RATING PER CHARACTERISTICAC50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF146.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL CERAMIC
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY6 RIBBON
OVERALL LENGTH0.850 INCHES NOMINAL
OVERALL HEIGHT0.280 INCHES MAXIMUM
OVERALL WIDTH0.725 INCHES NOMINAL