NSN 5961-01-131-6631

Part Details | THYRISTOR SEMICONDUCTOR DEVICE

5961-01-131-6631 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N6504, JAN2N6504, 2N6504G, 4901065040, 4901-06-5040, 5961-01-131-6631, 01-131-6631, 5961011316631, 011316631

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAY 14, 198201-131-663133096 ( SEMICONDUCTOR DEVICE, THYRISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-131-6631
Part Number Cage Code Manufacturer
2N650404713FREESCALE SEMICONDUCTOR, INC.
JAN2N650404713FREESCALE SEMICONDUCTOR, INC.
2N6504G1MQ07SEMICONDUCTOR COMPONENTS INDUSTRIES,LLC
4901-06-504023338WAVETEK U S INCDIV OF WAVETEK CORP
Technical Data | NSN 5961-01-131-6631
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1.5 MAXIMUM GATE TRIGGER VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICDN25.00 AMPERES MAXIMUM AND FN300.00 AMPERES MAXIMUM AND DF75.00 MILLIAMPERES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-220AB
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 PIN
OVERALL LENGTH0.705 INCHES NOMINAL
OVERALL HEIGHT0.546 INCHES NOMINAL
OVERALL WIDTH0.400 INCHES NOMINAL