Part Details | TRANSISTOR
5961-01-131-8020 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: FBNL198, FBN-L198, FBNL198, FBN-L198, 5961-01-131-8020, 01-131-8020, 5961011318020, 011318020
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 16, 1982 | 01-131-8020 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-131-8020
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| FBN-L198 | 9T790 | TDK-LAMBDA AMERICAS, INC.DIV TDK-LAMBDA AMERICAS-LOW POWER |
| FBN-L198 | 80103 | VEECO INSTRUMENTS INCLAMBDA DIV |
Technical Data | NSN 5961-01-131-8020
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC15.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG115.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.670 INCHES MINIMUM AND 0.920 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |