Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-132-7789 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N1616R, 1N1616R, 1N1616R, 1N1616R, 1N1616R, 10179932002, 10179932-002, 5961-01-132-7789, 01-132-7789, 5961011327789, 011327789
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 04, 1982 | 01-132-7789 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-132-7789
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N1616R | 09214 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 1N1616R | 59377 | MICROSEMI CORP-COLORADO |
| 1N1616R | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 1N1616R | 11961 | SEMICON COMPONENTS INC |
| 1N1616R | 31338 | SEMITRONICS CORP |
| 10179932-002 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-132-7789
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | CG7.00 AMPERES MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-4 |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.190 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 1.253 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.427 INCHES MINIMUM AND 0.437 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | RECTIFIER |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |