NSN 5961-01-135-1326

Part Details | TRANSISTOR

5961-01-135-1326 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: SFE1546, 18550235, 1855-0235, 18540235, 1854-0235, 18550235, 1855-0235, U310, FN4168, U310, U310E3, U310-E3, U310, 5961-01-135-1326, 01-135-1326, 5961011351326, 011351326

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 18, 198201-135-132620588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-135-1326
Part Number Cage Code Manufacturer
SFE154604713FREESCALE SEMICONDUCTOR, INC.
1855-023528480HEWLETT-PACKARD COMPANYDBA HP
1854-023528480HEWLETT-PACKARD COMPANYDBA HP
1855-02351LQK8KEYSIGHT TECHNOLOGIES, INC.
U31027014NATIONAL SEMICONDUCTOR CORPORATION
FN416817856SILICONIX INCORPORATEDDIV SILICONIX
U31021845SOLITRON DEVICES, INC.
U310-E356DR0VISHAY AMERICAS
U31056DR0VISHAY AMERICAS
Technical Data | NSN 5961-01-135-1326
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC25.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICBR24.00 MILLIAMPERES MINIMUM AND BR60.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG500.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-52
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
END ITEM IDENTIFICATIONAN/GRC-212 13499