Part Details | TRANSISTOR
5961-01-143-2529 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: C112, C1-12, 5961-01-143-2529, 01-143-2529, 5961011432529, 011432529
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 30, 1982 | 01-143-2529 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-143-2529
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| C1-12 | 50155 | VARIAN ASSOCIATES INCCOMMUNICATIONS TRANSISTOR DIV |
Technical Data | NSN 5961-01-143-2529
| Characteristic | Specifications |
|---|---|
| INTERNAL CONFIGURATION | JUNCTION CONTACT-DOUBLE EMITTER |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 36.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER |
| CURRENT RATING PER CHARACTERISTIC | AC0.25 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF5.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL CIRCLE DIAMETER | 1.000 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 0.100 INCHES NOMINAL |
| OVERALL DIAMETER | 0.300 INCHES NOMINAL |