NSN 5961-01-150-1669

Part Details | TRANSISTOR

5961-01-150-1669 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5039, 2N5039, 2N5039, 2000904008, 20-00904-008, 2N5039, 2N5039, 2N5039, 5961-01-150-1669, 01-150-1669, 5961011501669, 011501669

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 31, 198301-150-166920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-150-1669
Part Number Cage Code Manufacturer
2N503934371INTERSIL CORPORATIONDIV NA
2N503912969MICRO USPD INC
2N503933178MICROSEMI PPC INC
20-00904-00800724RAYTHEON COMPANYDBA RAYTHEON
2N503907256SILICON TRANSISTOR CORPSUB OF BBF INC
2N503901295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
2N503901281TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES
Technical Data | NSN 5961-01-150-1669
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC75.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
CURRENT RATING PER CHARACTERISTICAC20.00 AMPERES MAXIMUM AND BF50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG140.0 WATTS MAXIMUM
TRANSFER RATIO20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-3
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 PIN AND 1 CASE
OVERALL LENGTH1.573 INCHES MAXIMUM
OVERALL HEIGHT0.350 INCHES NOMINAL
OVERALL WIDTH1.050 INCHES MAXIMUM