Part Details | TRANSISTOR
5961-01-154-0755 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: XGSQ5030, XGSQ5025, XGSQ5030, 5961-01-154-0755, 01-154-0755, 5961011540755, 011540755
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 19, 1983 | 01-154-0755 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-154-0755
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| XGSQ5030 | 24444 | GENERAL SEMICONDUCTOR INDUSTRIES INC |
| XGSQ5025 | 24444 | GENERAL SEMICONDUCTOR INDUSTRIES INC |
| XGSQ5030 | 33178 | MICROSEMI PPC INC |
Technical Data | NSN 5961-01-154-0755
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 350.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC7.00 AMPERES MAXIMUM AND AB2.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG15.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-66 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.252 INCHES NOMINAL |
| OVERALL HEIGHT | 0.250 INCHES NOMINAL |
| OVERALL WIDTH | 0.700 INCHES NOMINAL |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |