Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-158-8439 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: MA4C169C, MA-4C169-C, 15100BDEE1, 15100BDEE-1, 7206489, 720648-9, 5961-01-158-8439, 01-158-8439, 5961011588439, 011588439
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 30, 1983 | 01-158-8439 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-158-8439
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MA-4C169-C | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| 15100BDEE-1 | 62117 | CUSTOM COMPONENTS INC |
| 720648-9 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-158-8439
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 0.018 MAXIMUM FORWARD VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AF50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF20.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.100 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.110 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |