Part Details | TRANSISTOR
5961-01-159-0847 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 72308422, 723084-22, CD3679, 5961-01-159-0847, 01-159-0847, 5961011590847, 011590847
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 03, 1983 | 01-159-0847 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-159-0847
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 723084-22 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| CD3679 | 50155 | VARIAN ASSOCIATES INCCOMMUNICATIONS TRANSISTOR DIV |
Technical Data | NSN 5961-01-159-0847
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC1.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF30.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 3 RIBBON |
| OVERALL LENGTH | 0.225 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.356 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | LEAD GOLD |