Part Details | TRANSISTOR
5961-01-165-4197 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: MIS31485, MIS-31485, MIS31458, MIS-31458, MIS31458, MIS-31458, 5961-01-165-4197, 01-165-4197, 5961011654197, 011654197
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 28, 1983 | 01-165-4197 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-165-4197
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MIS-31485 | 50998 | M/A-COM TECHNOLOGY SOLUTIONS INC. |
| MIS-31458 | 05716 | RAYTHEON COMPANYDBA RAYTHEON |
| MIS-31458 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-165-4197
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 56.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 18.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC8.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| SPECIAL FEATURES | CONTAINS BERYLLIUM OXIDE; JUNCTION PATTERN ARRANGEMENT: NPN |