Part Details | TRANSISTOR
5961-01-165-5161 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5248, 101375F, 101375, 2N5248, 5961-01-165-5161, 01-165-5161, 5961011655161, 011655161
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 30, 1983 | 01-165-5161 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-165-5161
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5248 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| 101375F | 52542 | SYSTRON-DONNER CORPMICROWAVE/INSTRUMENT DIV |
| 101375 | 52542 | SYSTRON-DONNER CORPMICROWAVE/INSTRUMENT DIV |
| 2N5248 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-01-165-5161
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -30.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | BS10.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG360.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-92 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.200 INCHES NOMINAL |
| OVERALL HEIGHT | 0.160 INCHES NOMINAL |
| OVERALL WIDTH | 0.200 INCHES NOMINAL |