NSN 5961-01-165-8527

Part Details | TRANSISTOR

5961-01-165-8527 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 1VN5201TNF750, 1VN5201TNF/750, 8064531, 806453-1, VN1208N2, 8064531, 806453-1, 131535791, 13153579-1, 5961-01-165-8527, 01-165-8527, 5961011658527, 011658527

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 04, 198301-165-852720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-165-8527
Part Number Cage Code Manufacturer
1VN5201TNF/75032293INTERSIL INCSUB OF GENERAL ELECTRIC CO
806453-196214RAYTHEON COMPANYDBA RAYTHEON
VN1208N259640SUPERTEX INC.
806453-101295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
13153579-118876U S ARMY AVIATION AND MISSILECOMMAND
Technical Data | NSN 5961-01-165-8527
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC80.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 80.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICAD10.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF12.5 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-39
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.260 INCHES MAXIMUM
OVERALL DIAMETER0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE