Part Details | TRANSISTOR
5961-01-169-6503 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5655, 21808, 5961-01-169-6503, 01-169-6503, 5961011696503, 011696503
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 12, 1984 | 01-169-6503 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-169-6503
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5655 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 21808 | 30377 | SMITHS AEROSPACE INC. ELECTRONICSYSTEMS-GRAND RAPIDS |
Technical Data | NSN 5961-01-169-6503
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | AB0.25 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG20.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 0.435 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.105 INCHES MAXIMUM |
| OVERALL WIDTH | 0.305 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIAL TEST FEATURES | TESTED PER BASE TEN SYSTEMS DWG 21808 |