Part Details | TRANSISTOR
5961-01-175-8439 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 60072, 60072, 6002DM30P, 6002-DM30P, RFD6002DM30P, RFD6002-DM30P, 5961-01-175-8439, 01-175-8439, 5961011758439, 011758439
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 05, 1984 | 01-175-8439 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-175-8439
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 60072 | 58135 | ACRIAN INC |
| 60072 | 0NY61 | RF PRODUCTS INC |
| 6002-DM30P | 21992 | RFD INC |
| RFD6002-DM30P | 12855 | TRAK MICROWAVE CORPORATIONDIV MICROWAVE |
Technical Data | NSN 5961-01-175-8439
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC3.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF35.0 WATTS MAXIMUM |
| TRANSFER RATIO | 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 0.800 INCHES NOMINAL |
| OVERALL HEIGHT | 0.225 INCHES NOMINAL |
| OVERALL WIDTH | 0.750 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | EXTERNAL SURFACES GOLD |