NSN 5961-01-177-1327

Part Details | TRANSISTOR

5961-01-177-1327 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 810371211, 8103-7121-1, 810371211, 8103-7121-1, ST7791, SES462, 5961-01-177-1327, 01-177-1327, 5961011771327, 011771327

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59APR 19, 198401-177-132720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-177-1327
Part Number Cage Code Manufacturer
8103-7121-112115DRS ICAS, LLC
8103-7121-133178MICROSEMI PPC INC
ST779150891SEMICONDUCTOR TECHNOLOGY INCDBA S T I
SES46231338SEMITRONICS CORP
Technical Data | NSN 5961-01-177-1327
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC700.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC10.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG125.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-3
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 PIN AND 1 CASE
OVERALL LENGTH1.573 INCHES MAXIMUM
OVERALL HEIGHT0.350 INCHES NOMINAL
OVERALL WIDTH1.050 INCHES MAXIMUM
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA12115-8103-7121 MANUFACTURERS SOURCE CONTROL
END ITEM IDENTIFICATIONRADAR BOMB DIRECTING SET AN/TPB-1D