Part Details | TRANSISTOR
5961-01-179-3272 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 267839, 267839, 267839, FN741, F1562, 5961-01-179-3272, 01-179-3272, 5961011793272, 011793272
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 17, 1984 | 01-179-3272 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-179-3272
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 267839 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 267839 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 267839 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| FN741 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| F1562 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-01-179-3272
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AK50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF10.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES NOMINAL |
| OVERALL DIAMETER | 0.220 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | TERMINALS GOLD |