Part Details | TRANSISTOR
5961-01-179-5436 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 268134, 268134, 268134, SILFN876, SIL-FN-876, F1575, SILFN876, SIL-FN-876, 5961-01-179-5436, 01-179-5436, 5961011795436, 011795436
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 19, 1984 | 01-179-5436 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-179-5436
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 268134 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 268134 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 268134 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| SIL-FN-876 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| F1575 | 21845 | SOLITRON DEVICES, INC. |
| SIL-FN-876 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-01-179-5436
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AK10.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF300.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES NOMINAL |
| OVERALL DIAMETER | 0.220 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |