NSN 5961-01-181-3052

Part Details | TRANSISTOR

5961-01-181-3052 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 40251, 505257, 209285008, 209285-008, 5961-01-181-3052, 01-181-3052, 5961011813052, 011813052

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUN 08, 198401-181-305220588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-181-3052
Part Number Cage Code Manufacturer
4025134371INTERSIL CORPORATIONDIV NA
50525789022TDK-LAMBDA AMERICAS INC.DIV HIGH POWER DIVISION
209285-00889022TDK-LAMBDA AMERICAS INC.DIV HIGH POWER DIVISION
Technical Data | NSN 5961-01-181-3052
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICEE8.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF117.0 WATTS MAXIMUM
TRANSFER RATIO15.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 60.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-3
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 UNTHREADED HOLE AND 1 CASE
OVERALL LENGTH1.573 INCHES MAXIMUM
OVERALL HEIGHT1.050 INCHES MAXIMUM
OVERALL WIDTH0.450 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE