Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-184-3468 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: D1132, D113-2, DI132, DI13-2, DI132, DI13-2, 5961-01-184-3468, 01-184-3468, 5961011843468, 011843468
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 17, 1984 | 01-184-3468 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-184-3468
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| D113-2 | 08748 | ELDEC CORPORATIONDBA CRANE AEROSPACE & ELECTRONICS |
| DI13-2 | 08748 | ELDEC CORPORATIONDBA CRANE AEROSPACE & ELECTRONICS |
| DI13-2 | 31338 | SEMITRONICS CORP |
Technical Data | NSN 5961-01-184-3468
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.3 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.4 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AS7.50 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF250.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.130 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |