Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-185-9969 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: C364MR33, 102A807P1, 5961-01-185-9969, 01-185-9969, 5961011859969, 011859969
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 06, 1984 | 01-185-9969 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-185-9969
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| C364MR33 | 66976 | DAKOTA MANUFACTURING CO., INC.DBA TRAIL-EZE |
| 102A807P1 | 24039 | VARO LLC |
Technical Data | NSN 5961-01-185-9969
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 720.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | FG1800.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AQ2.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 2 TAB, SOLDER LUG |
| OVERALL LENGTH | 1.656 INCHES MAXIMUM |
| OVERALL DIAMETER | 1.656 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | RECTIFIER |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |