Part Details | TRANSISTOR
5961-01-189-9363 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 18550251, 1855-0251, 18550251, 1855-0251, VA1019, 5961-01-189-9363, 01-189-9363, 5961011899363, 011899363
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 21, 1984 | 01-189-9363 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-189-9363
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1855-0251 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1855-0251 | 1LQK8 | KEYSIGHT TECHNOLOGIES, INC. |
| VA1019 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-189-9363
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 35.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CURRENT RATING PER CHARACTERISTIC | BR0.50 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF700.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES NOMINAL |
| OVERALL DIAMETER | 0.370 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |