Part Details | TRANSISTOR
5961-01-193-5326 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: IRF9130, 10312883, 10021691, 1002169-1, 5961-01-193-5326, 01-193-5326, 5961011935326, 011935326
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 05, 1984 | 01-193-5326 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-193-5326
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| IRF9130 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 10312883 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| 1002169-1 | 30881 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-193-5326
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | ADM12.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG75.0 WATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.450 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |