NSN 5961-01-195-1317

Part Details | TRANSISTOR

5961-01-195-1317 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: PST1196, PDS1009, 61002291, 6100229-1, STH 1548, 105BBA527, 5961-01-195-1317, 01-195-1317, 5961011951317, 011951317

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 22, 198401-195-131720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-195-1317
Part Number Cage Code Manufacturer
PST119632694OPTEK TECHNOLOGY, INC
PDS100932694OPTEK TECHNOLOGY, INC
6100229-182577RAYTHEON COMPANYDBA RAYTHEON
STH 154807256SILICON TRANSISTOR CORPSUB OF BBF INC
105BBA52721845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-01-195-1317
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 9.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
CURRENT RATING PER CHARACTERISTICAC10.00 AMPERES MAXIMUM AND AB5.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG125.0 WATTS MAXIMUM
TRANSFER RATIO35.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-61
MOUNTING METHOD THREADED STUD
MOUNTING FACILITY QUANTITY1
THREAD SERIES DESIGNATOR UNF
NOMINAL THREAD SIZE0.250 INCHES
TERMINAL TYPE AND QUANTITY3 TAB, SOLDER LUG
OVERALL LENGTH1.330 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS0.687 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN