NSN 5961-01-198-0089

Part Details | TRANSISTOR

5961-01-198-0089 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: MJE8501, 10350291, 1035029-1, 10350291, 1035029-1, 10350291, 1035029-1, 10368101, 1036810-1, 10350291, 1035029-1, 5961-01-198-0089, 01-198-0089, 5961011980089, 011980089

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 02, 198501-198-008920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-198-0089
Part Number Cage Code Manufacturer
MJE850104713FREESCALE SEMICONDUCTOR, INC.
1035029-152315KLEIN MARINE SYSTEMS, INC.
1035029-149956RAYTHEON COMPANYDBA RAYTHEON
1035029-13B150RAYTHEON COMPANYDBA RAYTHEON
1036810-149956RAYTHEON COMPANYDBA RAYTHEON
1035029-154X10RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-01-198-0089
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC800.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 1400.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEEN BASE AND EMITTER AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICAC2.50 AMPERES MAXIMUM AND AB2.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB65.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL PLASTIC
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY1
TERMINAL TYPE AND QUANTITY3 PIN
OVERALL LENGTH1.095 INCHES MINIMUM AND 1.182 INCHES MAXIMUM
OVERALL HEIGHT0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL WIDTH0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN