Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-198-1914 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: A2X2008, A2X2008, A2X2008, H980047001B, H980047-001B, H980047001B, H980047-001B, 5961-01-198-1914, 01-198-1914, 5961011981914, 011981914
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 05, 1985 | 01-198-1914 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-198-1914
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| A2X2008 | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| A2X2008 | 21847 | FEI MICROWAVE INC |
| A2X2008 | 14844 | FREQUENCY ELECTRONICS, INC. |
| H980047-001B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| H980047-001B | 31338 | SEMITRONICS CORP |
Technical Data | NSN 5961-01-198-1914
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | AF50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF125.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.076 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |