Part Details | TRANSISTOR
5961-01-201-6591 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 940916, 94-0916, PA604552, PA60455-2, V10600, 5961-01-201-6591, 01-201-6591, 5961012016591, 012016591
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 20, 1985 | 01-201-6591 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-201-6591
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 94-0916 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| PA60455-2 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| V10600 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-201-6591
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD10.00 AMPERES MAXIMUM AND CY35.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF60.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-66 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.266 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.340 INCHES MAXIMUM |
| OVERALL WIDTH | 0.700 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |