NSN 5961-01-201-9573

Part Details | TRANSISTOR

5961-01-201-9573 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 3130186G001, 2N6660, 5961-01-201-9573, 01-201-9573, 5961012019573, 012019573

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 26, 198501-201-957320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-201-9573
Part Number Cage Code Manufacturer
3130186G00128527HARRIS CORPORATIONDBA ELECTRONIC SYSTEMS, INTEGRATED
2N666021845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-01-201-9573
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 15.0 MAXIMUM GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICAD2.00 AMPERES MAXIMUM AND AK2.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF8.3 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.260 INCHES MAXIMUM
OVERALL DIAMETER0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE