Part Details | TRANSISTOR
5961-01-203-4740 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: MIS198365, MIS-19836/5, FN3156, MIS198365, MIS-19836/5, 5961-01-203-4740, 01-203-4740, 5961012034740, 012034740
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 14, 1985 | 01-203-4740 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-203-4740
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MIS-19836/5 | 9Y279 | RPL ELECTRONICS CO |
| FN3156 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| MIS-19836/5 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-203-4740
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 36.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 36.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 36.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | BS100.00 MILLIAMPERES MAXIMUM AND AD400.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | BH300.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.013 INCHES MINIMUM AND 0.019 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |