NSN 5961-01-212-8013

Part Details | TRANSISTOR

5961-01-212-8013 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: JAN2N918, 2000983001, 20-00983-001, 5961-01-212-8013, 01-212-8013, 5961012128013, 012128013

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 18, 198501-212-801320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-212-8013
Part Number Cage Code Manufacturer
JAN2N91881349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
20-00983-00100724RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-01-212-8013
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF200.0 MILLIWATTS MAXIMUM
TRANSFER RATIO20.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-72
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
END ITEM IDENTIFICATIONSATELLITE COMMUNICATIONS SET,AN/WSC-3(V)9