Part Details | TRANSISTOR
5961-01-213-7335 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 3N205, 3N205, 615238903, 615238-903, 5961-01-213-7335, 01-213-7335, 5961012137335, 012137335
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 29, 1985 | 01-213-7335 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-213-7335
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 3N205 | 1MY79 | INTERSIL COMMUNICATIONS INC. |
| 3N205 | 34371 | INTERSIL CORPORATIONDIV NA |
| 615238-903 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-213-7335
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AF10.00 MILLIAMPERES MAXIMUM AND CHM10.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF330.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |