Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-215-3242 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 4EX507, G390080S3, 5961-01-215-3242, 01-215-3242, 5961012153242, 012153242
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 23, 1985 | 01-215-3242 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-215-3242
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 4EX507 | 28527 | HARRIS CORPORATIONDBA ELECTRONIC SYSTEMS, INTEGRATED |
| G390080S3 | 24930 | HARRIS CORPORATIONDBA ELECTRONIC SYSTEMS, RADAR |
Technical Data | NSN 5961-01-215-3242
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM REVERSE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AF150.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF150.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.100 INCHES NOMINAL AND 1.500 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.290 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.110 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |