Part Details | TRANSISTOR
5961-01-216-5319 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2SC1907, 30319071, 30-31-9071, 5961-01-216-5319, 01-216-5319, 5961012165319, 012165319
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 12, 1985 | 01-216-5319 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-216-5319
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2SC1907 | S5316 | HITACHI SEISAKU SY0 |
| 30-31-9071 | 61993 | KIKUSUI INTL CORP |
Technical Data | NSN 5961-01-216-5319
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 19.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 2.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC50.00 MILLIAMPERES MAXIMUM AND AEM50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB300.0 MILLIWATTS MAXIMUM |
| TRANSFER RATIO | 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 12.7 MILLIMETERS MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 5.2 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 1.2 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 5.2 MILLIMETERS MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |