Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-217-0915 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6402, RELEASE 6437, 2N6402, 5961-01-217-0915, 01-217-0915, 5961012170915, 012170915
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 21, 1985 | 01-217-0915 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-217-0915
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6402 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 6437 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N6402 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
Technical Data | NSN 5961-01-217-0915
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | DS16.00 AMPERES MAXIMUM AND FG160.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AE20.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL AND UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 0.705 INCHES NOMINAL |
| OVERALL HEIGHT | 0.546 INCHES NOMINAL |
| OVERALL WIDTH | 0.400 INCHES NOMINAL |