Part Details | TRANSISTOR
5961-01-223-4925 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2S702, 5961-01-223-4925, 01-223-4925, 5961012234925, 012234925
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 30, 1985 | 01-223-4925 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-223-4925
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2S702 | 50891 | SEMICONDUCTOR TECHNOLOGY INCDBA S T I |
Technical Data | NSN 5961-01-223-4925
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 1.0 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 25.0 NOMINAL COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED |
| POWER RATING PER CHARACTERISTIC | AG0.6 WATTS MINIMUM AND AG1.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-5 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES NOMINAL |
| OVERALL DIAMETER | 0.352 INCHES NOMINAL |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |