Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-228-5605 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: NH1313304681, NH13-1330468-1, 1313304681, 13-1330468-1, 1313304681, 13-1330468-1, 1313304681, 13-1330468-1, 5961-01-228-5605, 01-228-5605, 5961012285605, 012285605
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 18, 1986 | 01-228-5605 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-228-5605
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| NH13-1330468-1 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 13-1330468-1 | 11293 | GTE GOVERNMENT SYSTEMS CORPSTRATEGIC SYSTEMS DIV |
| 13-1330468-1 | 12969 | MICRO USPD INC |
| 13-1330468-1 | 14552 | MICROSEMI CORPORATION |
Technical Data | NSN 5961-01-228-5605
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | CG3.00 AMPERES MAXIMUM AND CF80.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.900 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.180 INCHES MAXIMUM |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PN |