Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-229-1460 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N191, 420076, 1N191, 420076, 5961-01-229-1460, 01-229-1460, 5961012291460, 012291460
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 26, 1986 | 01-229-1460 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-229-1460
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N191 | 73293 | L-3 COMMUNICATIONS ELECTRONTECHNOLOGIES, INC. |
| 420076 | 1PQF4 | L3 TECHNOLOGIES, INC.DBA LINK SIMULATION & TRAINING |
| 1N191 | 94144 | RAYTHEON COMPANYDBA RAYTHEON |
| 420076 | 36378 | RAYTHEON TECHNICAL SERVICES COMPANY |
Technical Data | NSN 5961-01-229-1460
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 90.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AS30.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF80.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 90.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.105 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |