Part Details | TRANSISTOR
5961-01-229-3060 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: HXTR3102, HXTR-3102, HXTR3102, HXTR-3102, 5961-01-229-3060, 01-229-3060, 5961012293060, 012293060
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 29, 1986 | 01-229-3060 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-229-3060
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| HXTR-3102 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| HXTR-3102 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
Technical Data | NSN 5961-01-229-3060
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 35.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC100.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF700.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 300.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | CERAMIC AND METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 0.400 INCHES NOMINAL |
| OVERALL HEIGHT | 0.071 INCHES MAXIMUM |
| OVERALL WIDTH | 0.400 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |