NSN 5961-01-250-8512

Part Details | TRANSISTOR

5961-01-250-8512 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: MMBR5179, BFS17, 3529120010, 352-9120-010, AK0106460, 5961-01-250-8512, 01-250-8512, 5961012508512, 012508512

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 07, 198701-250-851220588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-250-8512
Part Number Cage Code Manufacturer
MMBR517904713FREESCALE SEMICONDUCTOR, INC.
BFS1725403PHILIPS CIRCUIT ASSEMBLIES
352-9120-01013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
AK0106460D0894ROHDE & SCHWARZ GMBH & CO. KG
Technical Data | NSN 5961-01-250-8512
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 2.5 MAXIMUM REVERSE VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICAC50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG350.0 MILLIWATTS MAXIMUM
TRANSFER RATIO25.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL CERAMIC
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.024 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.120 INCHES MAXIMUM
OVERALL HEIGHT0.023 INCHES MAXIMUM
OVERALL WIDTH0.055 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN