Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-256-5312 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N3294A, 1N3294A, 5961-01-256-5312, 01-256-5312, 5961012565312, 012565312
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 05, 1987 | 01-256-5312 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-256-5312
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N3294A | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 1N3294A | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-256-5312
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | CG100.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-8 |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.375 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB W/WIRE LEAD AND 1 THREADED STUD |
| OVERALL LENGTH | 5.270 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 1.060 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | RECTIFIER |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |