Part Details | TRANSISTOR
5961-01-257-0507 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6766, 2N6766, 2N6766, 2N6766, 2N6766, 2N6766, 5961-01-257-0507, 01-257-0507, 5961012570507, 012570507
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 11, 1987 | 01-257-0507 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-257-0507
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6766 | 1S926 | AMERICAN MICROSEMICONDUCTOR INC |
| 2N6766 | 18722 | HARRIS CORPSEMICONDUCTOR SECTOR |
| 2N6766 | 69210 | INTERNATIONAL RECTIFIER HIRELPRODUCTS, INC. |
| 2N6766 | 1MY79 | INTERSIL COMMUNICATIONS INC. |
| 2N6766 | 34371 | INTERSIL CORPORATIONDIV NA |
| 2N6766 | 21854 | SPACE POWER ELECTRONICS INC |
Technical Data | NSN 5961-01-257-0507
| Characteristic | Specifications |
|---|---|
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM GATE SUPPLY VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | DA20.00 AMPERES MAXIMUM AND AK4.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF150.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | Y204 |