Part Details | TRANSISTOR
5961-01-258-8314 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 10133395, PC716221, PC71622-1, DM1123, SD21402DER, SD214-02-DE/R, 5961-01-258-8314, 01-258-8314, 5961012588314, 012588314
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 08, 1987 | 01-258-8314 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-258-8314
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 10133395 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| PC71622-1 | 09344 | ROCKWELL COLLINS, INC.DBA RC DISPLAYS SYSTEMS |
| DM1123 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| SD214-02-DE/R | 62305 | TELMOS INC |
Technical Data | NSN 5961-01-258-8314
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 40.0 NOMINAL GATE TO SOURCE VOLTAGE AND 40.0 NOMINAL GATE TO SUBSTRATE VOLTAGE AND 25.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG300.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE |
| END ITEM IDENTIFICATION | F-15 ACFT |