NSN 5961-01-259-2014

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-01-259-2014 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: 704AS9857, QSCH5984, QSCH-5984, 704AS9857, QSCH5984, QSCH-5984, 704AS9857, 8998571, 899857-1, 5961-01-259-2014, 01-259-2014, 5961012592014, 012592014

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 14, 198701-259-201420589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-259-2014
Part Number Cage Code Manufacturer
704AS985750434AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES
QSCH-598450434AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES
704AS985728480HEWLETT-PACKARD COMPANYDBA HP
QSCH-598428480HEWLETT-PACKARD COMPANYDBA HP
704AS985730003NAVAL AIR SYSTEMS COMMAND MANAGEDORIGINAL DESIGN ACTIVITY NOT
899857-196214RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-01-259-2014
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC3.0 MAXIMUM REVERSE VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENTM10.0/P10.0
CURRENT RATING PER CHARACTERISTICAF100.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF100.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL GLASS
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.062 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OVERALL LENGTH0.104 INCHES MAXIMUM
OVERALL HEIGHT0.043 INCHES MAXIMUM
OVERALL WIDTH0.104 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
PRECIOUS MATERIAL GOLD
PRECIOUS MATERIAL AND LOCATIONTERMINAL SURFACES GOLD