NSN 5961-01-267-3997

Part Details | THYRISTOR SEMICONDUCTOR DEVICE

5961-01-267-3997 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 18840261, 1884-0261, 18840261, 1884-0261, 72053, 5961-01-267-3997, 01-267-3997, 5961012673997, 012673997

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 10, 198701-267-399733096 ( SEMICONDUCTOR DEVICE, THYRISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-267-3997
Part Number Cage Code Manufacturer
1884-026150434AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES
1884-026128480HEWLETT-PACKARD COMPANYDBA HP
7205334371INTERSIL CORPORATIONDIV NA
Technical Data | NSN 5961-01-267-3997
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC0.8 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
CURRENT RATING PER CHARACTERISTICDF200.00 MICROAMPERES MAXIMUM AND DH8.00 MILLIAMPERES MAXIMUM AND DS4.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAQ100.0 MILLIWATTS MAXIMUM AND AE0.5 WATTS MAXIMUM
INCLOSURE MATERIAL PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-220AB
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 PIN
OVERALL LENGTH0.705 INCHES NOMINAL
OVERALL HEIGHT0.546 INCHES NOMINAL
OVERALL WIDTH0.400 INCHES NOMINAL
FUNCTION FOR WHICH DESIGNED RECTIFIER
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNPN