Part Details | TRANSISTOR
5961-01-274-8965 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 4044204499, 4044204-499, VA1106, 5961-01-274-8965, 01-274-8965, 5961012748965, 012748965
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 16, 1988 | 01-274-8965 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-274-8965
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 4044204-499 | 07187 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| VA1106 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-274-8965
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 90.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD2.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF4.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |