Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-275-2871 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: C228B2, 5961-01-275-2871, 01-275-2871, 5961012752871, 012752871
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 20, 1988 | 01-275-2871 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-275-2871
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| C228B2 | 66967 | POWEREX INC |
Technical Data | NSN 5961-01-275-2871
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 300.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | DS35.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AQ0.5 WATTS NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL TYPE AND QUANTITY | 3 TAB, SOLDER LUG |
| OVERALL LENGTH | 1.702 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.552 INCHES MINIMUM AND 0.562 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| END ITEM IDENTIFICATION | 5895-01-205-0877 |