Part Details | TRANSISTOR
5961-01-275-6575 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: MTM15N50, 69020379, 6902-0379, Q260012051, Q26-0012-051, Q260012050, Q26-0012-050, 5961-01-275-6575, 01-275-6575, 5961012756575, 012756575
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 24, 1988 | 01-275-6575 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-275-6575
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MTM15N50 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 6902-0379 | 14304 | HARRIS CORPORATIONDBA HARRIS RF COMMUNICATION |
| Q26-0012-051 | 14304 | HARRIS CORPORATIONDBA HARRIS RF COMMUNICATION |
| Q26-0012-050 | 14304 | HARRIS CORPORATIONDBA HARRIS RF COMMUNICATION |
Technical Data | NSN 5961-01-275-6575
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AD15.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF250.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.550 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.300 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |